Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and they could be used to simplify the processing sequence of single-junction cells with interdigitated back contacts (IBCs). Polysilicon tunneling junctions require high processing temperatures to crystallize the layers; however, this also facilitates interdiffusion of dopants, whereas tunnelling relies on degenerate doping concentrations in the constituent layers and sharp interfaces between them. Using secondary-ion mass spectrometry (SIMS) in dynamic mode, it is found that dopants diffuse readily across the interface, thus compromising the junction. The undesired diffusion is suppressed by modifying the interface with C, O, or a combination of these. Moreover, it is found that the modification does not interfere with diffusion of H, an essential element to passivate defects at the surface of the silicon wafer. Thus, implied open-circuit voltages (iVoc) of up to 740 mV are demonstrated for contact resistivities less than 40 mΩ cm2.