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  4. Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs
 
research article

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Samizadeh Nikoo, Mohammad  
•
Khadar, Riyaz Abdul  
•
Jafari, Armin  
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March 4, 2021
IEEE Electron Device Letters

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (COSS) in these transistors severely limits their application at high switching frequencies. In this work we report the observation of unexpected resonances in GaN-on-Si HEMTs. These high-frequency resonances lead to considerable energy losses in fast charging and discharging of the COSS during switching transients. We propose a simple wafer-level measurement technique to evaluate such losses at the epitaxy level, prior to the transistor fabrication. Experimental results from this technique revealed that the Silicon substrate is the main origin of these losses. Such wafer-level evaluation of COSS losses opens opportunities to characterize and optimize epitaxies for future power devices, especially those operating at high switching frequencies.

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Type
research article
DOI
10.1109/LED.2021.3064021
Author(s)
Samizadeh Nikoo, Mohammad  
Khadar, Riyaz Abdul  
Jafari, Armin  
Zhu, Minghua
Matioli, Elison  
Date Issued

2021-03-04

Publisher

Institute of Electrical and Electronics Engineers

Published in
IEEE Electron Device Letters
Start page

1

End page

1

Subjects

Output capacitance

•

COSS

•

COSS losses

•

EDISS

•

GaN

•

HEMT

•

AlGaN/GaN

•

Si substrate

Editorial or Peer reviewed

REVIEWED

Written at

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March 9, 2021
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/175820
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