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research article

The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias

Frasca, Simone  
•
Leghziel, Rebecca Camilla  
•
Arabadzhiev, Ivo N.
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February 17, 2021
Scientific Reports

We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturing as they enable 3D chip integration. However, the usual standardized TSV fabrication process has to deal with scalloping, an imperfection in the sidewalls caused by the deep reactive ion etching. The presence of scalloping causes stress and field concentration in the dielectric barrier, thereby dramatically impacting the following TSV filling step, which is performed by means of electrochemical plating. So, we propose here a new scallop free and non-tapered approach to overcome this challenge by adding a new step to the standard TSV procedure exploiting the crystalline orientation of silicon wafers. Thank to this new step, that we called “Michelangelo”, we obtained an extremely well polishing of the TSV holes, by reaching atomic-level smoothness and a record aspect ratio of 28:1. The Michelangelo step will thus drastically reduce the footprint of 3D structures and will allow unprecedented efficiency in 3D chip integration.

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Type
research article
DOI
10.1038/s41598-021-83546-w
Author(s)
Frasca, Simone  
Leghziel, Rebecca Camilla  
Arabadzhiev, Ivo N.
Pasquier, Benoît  
Tomassi, Grégoire F. M.
Carrara, Sandro  
Charbon, Edoardo  
Date Issued

2021-02-17

Publisher

Nature Research

Published in
Scientific Reports
Volume

11

Issue

1

Article Number

3997

Note

This is an Open Access article under the terms of the Creative Commons Attribution License

Editorial or Peer reviewed

REVIEWED

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Available on Infoscience
March 16, 2021
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/176004
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