research article
Photocurrent increase in n-i-p thin film silicon solar cells by guided mode excitation via grating coupler
Angle resolved measurements of the external quantum efficiency of n-i-p single junction amorphous solar cell deposited on a grating structure show clearly defined peaks of enhanced photocurrent in the weakly absorbing region between 1.6 and 2.15 eV. We explain these absorption phenomena and their angular variation with the excitation of guided modes via grating coupling. Calculation using an equivalent flat multilayer system permits to relate the theoretical values with the experimental data.
Type
research article
Web of Science ID
WOS:000278183200084
Author(s)
Date Issued
2010
Publisher
Published in
Volume
96
Issue
21
Article Number
213508
Note
IMT-NE Number: 564
Editorial or Peer reviewed
NON-REVIEWED
Written at
EPFL
EPFL units
Use this identifier to reference this record