Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop

Harik, L.; Kayal, M.; Sallese, Jean-Michel

doi:10.1109/SOI.2008.4656309

conference paper

Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop

Harik, L.

•

Kayal, M.

•

Sallese, Jean-Michel

2008

Proceedings of the IEEE International SOI Conference, 2008. SOI.

SOI Conference, 2008. SOI. IEEE International

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. ©2008 IEEE.