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research article

Conducting two-phase silicon oxide layers for thin-film silicon solar cells

Buehlmann, Peter
•
Bailat, Julien
•
Feltrin, Andrea
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2009
Mater. Res. Soc. Symp. Proc.

We present optical properties and microstructure analyses of hydrogenated silicon suboxide layers containing silicon nanocrystals (nc-SiOx:H). This material is especially adapted for the use as intermediate reflecting layer (IRL) in micromorph silicon tandem cells due to its low refractive index and relatively high transverse conductivity. The nc-SiOx:H is deposited by very high frequency plasma enhanced chemical vapor deposition from a SiH4/CO2/H2/PH3 gas mixture. We show the influence of H2/SiH4 and CO2/SiH4 gas ratios on the layer properties as well as on the micromorph cell when the nc-SiOx:H is used as IRL. The lowest refractive index achieved in a working micromoph cell is 1.71 and the highest initial micromoph efficiency with such an IRL is 13.3 %.

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Type
research article
DOI
10.1557/PROC-1123-1123-P03-09
Author(s)
Buehlmann, Peter
Bailat, Julien
Feltrin, Andrea
Ballif, Christophe  
Date Issued

2009

Published in
Mater. Res. Soc. Symp. Proc.
Volume

1123

Start page

P03

End page

09

Note

IMT-NE Number: 513

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
PV-LAB  
Available on Infoscience
January 28, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/46255
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