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conference paper

Functionality Enhanced Memories for Edge-AI Embedded Systems

Levisse, Alexandre Sébastien Julien  
•
Rios, Marco Antonio  
•
Simon, William Andrew  
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November 25, 2019
2019 19Th Non-Volatile Memory Technology Symposium (Nvmts 2019)
Non-Volatile Memory Technology Symposium 2019

With the surge in complexity of edge workloads, it appeared in the scientific community that such workloads cannot be anymore overflown to the cloud due to the huge edge device to server communication energy cost and the high energy consumption induced in high end server infrastructure. In this context, edge devices must be able to efficiently process complex data-intensive workloads bringing in the concept of Edge AI. However, current architectures show poor energy efficiency while running data intensive workloads. While the community looks toward the integration of new memory architectures using emerging resistive memories and new specific accelerators, we propose a new concept to boost the energy efficiency of Edge systems running data intensive workloads : Functionality Enhanced Memories (FEM). FEM consist on a memory architecture with new functionalities at a decent area overhead cost. In this work, we demonstrate the feasibility of native transpose access for 1Transistor-1RRAM bitcells leveraging three independent gates transistors. Based on that, we thereby propose a concept of FEM-enabled Edge system embedding the proposed native transpose access RRAM-based memory architecture and an in-SRAM computing architecture (the BLADE).

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Type
conference paper
DOI
10.1109/NVMTS47818.2019.8986214
Author(s)
Levisse, Alexandre Sébastien Julien  
Rios, Marco Antonio  
Simon, William Andrew  
Gaillardon, Pierre-Emmanuel Julien Marc  
Atienza Alonso, David  
Date Issued

2019-11-25

Publisher

IEEE

Published in
2019 19Th Non-Volatile Memory Technology Symposium (Nvmts 2019)
ISBN of the book

978-1-7281-4431-3

Total of pages

4

Subjects

RRAM

•

1T1R

•

TIGFET

•

Functionality Enhanced Devices

•

Functionality Enhanced Memories

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
ESL  
Event nameEvent placeEvent date
Non-Volatile Memory Technology Symposium 2019

Durham, North Carolina, USA

October 28-30, 2019

Available on Infoscience
November 25, 2019
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/163350
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