We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific growth planes. We further characterize InP films using STEM, PL and CL and find phase purities of 100% and 97% for zinc-blende (ZB) and wurtzite (WZ), respectively.