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conference paper

Crystal Phase Tuning in Planar Films of III-V Semiconductors

Staudiner, Philipp
•
Tappy, Nicolas  
•
Mauthe, Svenja
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January 1, 2019
2019 Compound Semiconductor Week (Csw)
Compound Semiconductor Week (CSW) Conference

We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific growth planes. We further characterize InP films using STEM, PL and CL and find phase purities of 100% and 97% for zinc-blende (ZB) and wurtzite (WZ), respectively.

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Type
conference paper
DOI
10.1109/ICIPRM.2019.8819144
Web of Science ID

WOS:000539485600154

Author(s)
Staudiner, Philipp
•
Tappy, Nicolas  
•
Mauthe, Svenja
•
Moselund, Kirsten  
•
Fontcuberta i Morral, Anna  
•
Schmid, Heinz
Date Issued

2019-01-01

Publisher

IEEE

Publisher place

New York

Published in
2019 Compound Semiconductor Week (Csw)
ISBN of the book

978-1-7281-0080-7

Subjects

crystal phase

•

zinc-blende

•

wurtzite

•

indium phosphide

•

gallium arsenide

•

growth

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LMSC  
NANOLAB  
Event nameEvent placeEvent date
Compound Semiconductor Week (CSW) Conference

Nara, JAPAN

May 19-23, 2019

Available on Infoscience
July 9, 2020
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/169912
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