As transistor dimensions have shrunk over the years, X-ray microscopy resolution has also improved to meet the demands of the semiconductor industry. Although electron microscopy can achieve higher resolution, X-rays offer unique advantages, including non-destructive 3D imaging of fully intact integrated circuit dies and the future possibility of imaging under operando conditions. In this work, we demonstrate the capabilities of ptychographic X-ray computed tomography for 3D microchip imaging at 4 nm resolution. To achieve such performance, we introduce newly developed methods to overcome nm-scale experimental instabilities and depth-of-field limitations. Microchip-specific high-throughput data collection methods will also be introduced.