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  4. Review and Classification of Gain Cell eDRAM Implementations
 
conference paper

Review and Classification of Gain Cell eDRAM Implementations

Teman, Adam
•
Meinerzhagen, Pascal Andreas  
•
Burg, Andreas Peter  
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2012
IEEE Convention of Electrical and Electronics Engineers in Israel (IEEEI)

With the increasing requirement of a high-density, high-performance, low power alternative to traditional SRAM, Gain Cell (GC) embedded DRAMs have gained a renewed interest in recent years. Several industrial and academic publications have presented GC memory implementations for various target applications, including high-performance processor caches, wireless communication memories, and biomedical system storage. In this paper, we review and compare the recent publications, examining the design requirements and the implementation techniques that lead to achievement of the required design metrics of these applications.

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Type
conference paper
DOI
10.1109/EEEI.2012.6377022
Author(s)
Teman, Adam
Meinerzhagen, Pascal Andreas  
Burg, Andreas Peter  
Fish, Alexander
Date Issued

2012

Published in
IEEE Convention of Electrical and Electronics Engineers in Israel (IEEEI)
Subjects

Gain-cells

•

eDRAM

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
TCL  
Available on Infoscience
October 3, 2012
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/85929
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