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  4. Tuning of the Rashba effect in Pb quantum well states via a variable Schottky barrier
 
research article

Tuning of the Rashba effect in Pb quantum well states via a variable Schottky barrier

Slomski, Bartosz
•
Landolt, Gabriel
•
Bihlmayer, Gustav
Show more
2013
Scientific Reports

Spin-orbit interaction (SOI) in low-dimensional systems results in the fascinating property of spin-momentum locking. In a Rashba system the inversion symmetry normal to the plane of a two-dimensional (2D) electron gas is broken, generating a Fermi surface spin texture reminiscent of spin vortices of different radii which can be exploited in spin-based devices. Crucial for any application is the possibility to tune the momentum splitting through an external parameter. Here we show that in Pb quantum well states (QWS) the Rashba splitting depends on the Si substrate doping. Our results imply a doping dependence of the Schottky barrier which shifts the Si valence band relative to the QWS. A similar shift can be achieved by an external gate voltage or ultra-short laser pulses, opening up the possibility of terahertz spintronics.

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Type
research article
DOI
10.1038/srep01963
Web of Science ID

WOS:000320130300002

Author(s)
Slomski, Bartosz
Landolt, Gabriel
Bihlmayer, Gustav
Osterwalder, Juerg
Dil, J. Hugo  
Date Issued

2013

Publisher

Nature Publishing Group

Published in
Scientific Reports
Volume

3

Article Number

1963

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
SCI-SB-HD  
Available on Infoscience
June 23, 2015
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/115350
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