research article
Single- and multi-wall carbon nanotube field-effect transistors
We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors.
Type
research article
Author(s)
Date Issued
1998
Publisher
Published in
Volume
73
Issue
17
Start page
2447
End page
2449
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
Available on Infoscience
February 4, 2010
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