conference paper

A capacitance-voltage model for DG-TFET

Biswas, Arnab  
•
Ionescu, Mihai Adrian  
2015
2015 Silicon Nanoelectronics Workshop (SNW)
IEEE Silicon Nanoelectronics Workshop
Type
conference paper
Author(s)
Biswas, Arnab  
Ionescu, Mihai Adrian  
Date Issued

2015

Publisher

IEEE, Piscataway, NJ, USA

Published in
2015 Silicon Nanoelectronics Workshop (SNW)
Start page

1

End page

2

Subjects

field effect transistors

•

semiconductor device measurement

•

technology CAD (electronics)

URL

URL

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7275314&filter=AND%28p_Publication_Number:7259952%29
Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
IEEE Silicon Nanoelectronics Workshop

Kyoto, Japan

14-15 June 2015

Available on Infoscience
November 23, 2015
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/120748