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research article

Engineering the spatial confinement of exciton polaritons in semiconductors

Idrissi Kaitouni, Reda  
•
El Daïf, Ounsi  
•
Baas, Augustin  
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2006
Physical Review B

We demonstrate three-dimensional spatial confinement of exciton-polaritons in a semiconductor microcavity. Polaritons are confined within a micron-sized region of slightly larger cavity thickness, called mesa, through lateral trapping of their photon component. This results in a shallow potential well that allows the simultaneous existence of extended states above the barrier. Photoluminescence spectra were measured as a function of either the emission angle or the position on the sample. Striking signatures of confined states of lower and upper polaritons, together with the corresponding extended states at higher energy, were found. In particular, the confined states appear only within the mesa region, and are characterized by a discrete energy spectrum and a broad angular pattern. A theoretical model of polariton states, based on a realistic description of the confined photon modes, supports our observations.

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Type
research article
DOI
10.1103/PhysRevB.74.155311
Web of Science ID

WOS:000241723600091

Author(s)
Idrissi Kaitouni, Reda  
El Daïf, Ounsi  
Baas, Augustin  
Richard, Maxime  
Paraiso, Taofiq  
Lugan, Pierre  
Guillet, Thierry  
Morier-Genoud, Francois  
Ganière, J. D.  
Staehli, J. L.  
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Date Issued

2006

Published in
Physical Review B
Volume

74

Issue

15

Article Number

155311

Subjects

Bose-Einstein Condensation

•

Single Quantum-Dot

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Microcavity Polaritons

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Coupling Regime

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Photoluminescence

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Weak

•

System

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LTPN  
LOEQ  
Available on Infoscience
September 10, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11917
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