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  4. JESD204B Compliant 12.5 Gb/s LVDS and SST Transmitters in 28 nm FD-SOI CMOS
 
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conference paper

JESD204B Compliant 12.5 Gb/s LVDS and SST Transmitters in 28 nm FD-SOI CMOS

Celik, Firat  
•
Akkaya, Ayca  
•
Tajalli, Armin  
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January 1, 2019
2019 15Th Conference On Phd Research In Microelectronics And Electronics (Prime)
15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

JESD204B compliant low-voltage differential signaling (LVDS), and source-series-terminated (SST) transmitters in 28 nm FD-SOI CMOS technology are presented with 1.1 pJ/bit and 1.7 pJ/bit at 12.5 Gb/s, respectively. An external 6.25 GHz single-ended clock, which is terminated internally with mid-common-mode termination, is used for half-rate operation in both designs, which can achieve open eye diagrams at 12.5 Gb/s data rate. Both transmitters are measured and compared in terms of design complexity, power consumption, area, and signal integrity performance. From architecture selection to circuit design, power consumption is minimized while maintaining the maximum data rate that the JESD204B standard supports. High-speed standard cell ESD diodes are employed for the pads to achieve >1kV HBM ESD protection, while adding 200 fF parasitic capacitance.

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