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  4. van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics
 
research article

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

Paul, Rajrupa  
•
Humblot, Nicolas  
•
Steinvall, Simon Escobar  
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April 22, 2020
Crystal Growth & Design

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we report the van der Waals epitaxy of tetragonal Zn3P2 (α-Zn3P2) on graphene using molecular beam epitaxy. The growth on graphene progresses by the formation of Zn3P2 triangular flakes, which merge to form a thin film with a strong (101) crystallographic texture. Photoluminescence from the Zn3P2 thin films is consistent with previously reported Zn3P2. This work demonstrates that the need for a lattice-matched substrate can be circumvented by the use of graphene as a substrate. Moreover, the synthesis of highquality Zn3P2 flakes and films on graphene brings new material choices for low-cost photovoltaic applications.

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Type
research article
DOI
10.1021/acs.cgd.0c00125
Author(s)
Paul, Rajrupa  
Humblot, Nicolas  
Steinvall, Simon Escobar  
Stutz, Elias Zsolt  
Joglekar, Shreyas Sanjay
Leran, Jean-Baptiste  
Zamani, Mahdi  
Cayron, Cyril  
Logé, Roland  
del Aguila, Andres Granados
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Date Issued

2020-04-22

Published in
Crystal Growth & Design
Volume

20

Issue

6

Start page

3816

End page

3825

Note

This is an open access article under the CC BY-NC-ND license.

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LMSC1  
LMTM  
Available on Infoscience
April 25, 2020
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/168387
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