Two novel and simple donor-pi-bridge-donor (D-pi-D) hole-transporting materials (HTMs) containing two units of the p-methoxytriphenylamine (TPA) electron donor group covalently bridged by means of the 3,4-dimethoxyselenophene spacer through single and triple bonds are reported. The optoelectronic and thermal properties of the new selenium-containing HTMs have been determined using standard experimental techniques and theoretical density functional theory (DFT) calculations. The selenium-based HTMs have been incorporated in mesoporous perovskite solar cells (PSCs) in combination with the triple-cation perovskite (FAPbI(3))(0.87)(MAPbBr(3))(0.13) CsPbI3. Limited values of power conversion efficiencies, up to 13.4 %, in comparison with the archetype spiro-OMeTAD (17.8 %), were obtained. The reduced efficiencies showed by the new HTMs are attributed to their poor film-forming ability, which constrains their photovoltaic performance due to the appearance of structural defects (pinholes).