research article

Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance

Moselund, K. E.  
•
Freiermuth, J. E.
•
Dainesi, P.  
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2006
IEEE Transactions on Electron Devices
Type
research article
DOI
10.1109/TED.2006.870574
Web of Science ID

WOS:000236473500018

Author(s)
Moselund, K. E.  
Freiermuth, J. E.
Dainesi, P.  
Ionescu, A. M.  
Date Issued

2006

Published in
IEEE Transactions on Electron Devices
Volume

53

Issue

4

Start page

712

End page

718

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
May 16, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/6990