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  4. 1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes
 
research article

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Wang, Taifang
•
Ma, Jun
•
Matioli, Elison
2018
IEEE Electron Device Letters
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Type
research article
DOI
10.1109/LED.2018.2842031
Author(s)
Wang, Taifang
Ma, Jun
Matioli, Elison
Date Issued

2018

Publisher

Institute of Electrical and Electronics Engineers

Published in
IEEE Electron Device Letters
Volume

39

Issue

7

Start page

1038

End page

1041

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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POWERLAB  
Available on Infoscience
February 22, 2019
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/154681
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