Unexpected electronic properties of strained La1.85Sr0.15CuO4 epitaxial films
Surprising results on electronic properties of strained thin La1.85Sr0.15CuO4 epitaxial films are reported. We report on the very first angle resolved photoemission (ARPES) measurements of the dispersion on in-situ grown, in-plane compressed T-phase LSCO films (showing T-C enhancement). The data show clear band crossing, implying that in-plane compressive strain at constant doping results in the suppression of the saddle point, changing the topology of the Fermi surface from hole-like to electron-like.
EPFL, Fac Basic Sci, IPMC, CH-1015 Lausanne, Switzerland. Ariosa, D, EPFL, Fac Basic Sci, IPMC, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 702UH
Record created on 2006-10-03, modified on 2016-08-08