Surprising results on electronic properties of strained thin La1.85Sr0.15CuO4 epitaxial films are reported. We report on the very first angle resolved photoemission (ARPES) measurements of the dispersion on in-situ grown, in-plane compressed T-phase LSCO films (showing T-C enhancement). The data show clear band crossing, implying that in-plane compressive strain at constant doping results in the suppression of the saddle point, changing the topology of the Fermi surface from hole-like to electron-like.