Structural phase transition in early growth of Bi2Sr2CaCu2O8+x films on SrTiO3 substrates

We used pulsed laser deposition, with a Bi2Sr2CaCu2O8+x target, to grow films ranging from (1/4) to 10 unit cells thick. We studied these films, and reference Bi2Sr2CaCu2O8+x single crystal samples, using angle-integrated photoemission, core level photoemission, and x-ray diffraction. The data indicate that all films exhibit a metallic-like Fermi edge in the photoemission data. More strikingly, a structural phase transition occurs at a nominal Bi2Sr2CaCu2O8+x thickness of approximately one unit cell, converting the precursor Bi2O2.33 highly coherent thin film into a Bi2Sr2CaCu2O8+x structure. (C) 2002 American Institute of Physics.


Published in:
Journal of Applied Physics, 91, 3, 1187-1190
Year:
2002
ISSN:
0021-8979
Note:
Ecole Polytech Fed Lausanne, Dept Phys, LPMEIPA, CH-1015 Lausanne, Switzerland. Univ Wisconsin, Dept Phys, Madison, WI 53706 USA. Ariosa, D, Ecole Polytech Fed Lausanne, Dept Phys, LPMEIPA, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 514CF
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 Record created 2006-10-03, last modified 2018-03-18


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