Band discontinuity fluctuations and local chemistry at the GaSe-Si interface
1998
Abstract
Photoemission spectromicroscopy data on Si-GaSe with 0.2 mu m lateral resolution revealed laterally inhomogeneous interface Se-Si chemical reactions. The local Si 2p fits agrees with interface Si selenide parameters; the Se 3d peaks indicate a Si-selenide component; the Ga 3d peaks exhibit a metallic component whose intensity increases with Si coverage. This local interface reaction is related to lateral changes in the band lineup. (C) 1998 American Institute of Physics. [S0003-6951(98)02839-3].
Details
Title
Band discontinuity fluctuations and local chemistry at the GaSe-Si interface
Author(s)
Zacchigna, M. ; Sirigu, L. ; Almeida, J. ; Berger, H. ; Gregoratti, L. ; Marsi, M. ; Kiskinova, M. ; Margaritondo, G.
Published in
Applied Physics Letters
Volume
73
Issue
13
Pages
1859-1861
Date
1998
ISSN
0003-6951
Keywords
Note
Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Sincrotrone Trieste, I-34012 Trieste, Italy. Zacchigna, M, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 124JZ
ISI Document Delivery No.: 124JZ
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Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
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Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03