Band discontinuity fluctuations and local chemistry at the GaSe-Si interface

Photoemission spectromicroscopy data on Si-GaSe with 0.2 mu m lateral resolution revealed laterally inhomogeneous interface Se-Si chemical reactions. The local Si 2p fits agrees with interface Si selenide parameters; the Se 3d peaks indicate a Si-selenide component; the Ga 3d peaks exhibit a metallic component whose intensity increases with Si coverage. This local interface reaction is related to lateral changes in the band lineup. (C) 1998 American Institute of Physics. [S0003-6951(98)02839-3].


Published in:
Applied Physics Letters, 73, 13, 1859-1861
Year:
1998
ISSN:
0003-6951
Keywords:
Note:
Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Sincrotrone Trieste, I-34012 Trieste, Italy. Zacchigna, M, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 124JZ
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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