The growth and characterization of GaInSe2 single crystals

GalnSe(2) single crystals have been grown and characterized by experimental techniques such as high-resolution transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy and optical and electrical measurements. The samples were prepared in single-crystal form from a melt. The structural analysis indicates that GalnSe(2) has a hexagonal structure, and confirms the high quality of the produced single crystals. Quantitative information on electrical and optical properties of single-crystalline GalnSe(2) was obtained by investigating the resistivity and photoluminescence as a function of the temperature and excitation intensity.


Publié dans:
Journal of Physics D-Applied Physics, 30, 18, 2509-2513
Année
1997
ISSN:
0022-3727
Mots-clefs:
Note:
Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. ernest orlando lawrence berkeley lab,berkeley,ca 94720. univ bari,dipartmento fis,i-70126 bari,italy. fac sci,dept phys,sohag,egypt. Mobarak, M, QUENA S VALLEY UNIV,DEPT PHYS,QENA,EGYPT.
ISI Document Delivery No.: XY645
Laboratoires:




 Notice créée le 2006-10-03, modifiée le 2018-03-18


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