The growth and characterization of GaInSe2 single crystals
GalnSe(2) single crystals have been grown and characterized by experimental techniques such as high-resolution transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy and optical and electrical measurements. The samples were prepared in single-crystal form from a melt. The structural analysis indicates that GalnSe(2) has a hexagonal structure, and confirms the high quality of the produced single crystals. Quantitative information on electrical and optical properties of single-crystalline GalnSe(2) was obtained by investigating the resistivity and photoluminescence as a function of the temperature and excitation intensity.
Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. ernest orlando lawrence berkeley lab,berkeley,ca 94720. univ bari,dipartmento fis,i-70126 bari,italy. fac sci,dept phys,sohag,egypt. Mobarak, M, QUENA S VALLEY UNIV,DEPT PHYS,QENA,EGYPT.
ISI Document Delivery No.: XY645
Record created on 2006-10-03, modified on 2016-08-08