Schottky barrier at the Au/Gap(110) interface
The Schottky-barrier formation of the Au/GaP (110) interface has been investigated by photoemission, in the presence of large surface photovoltage effects induced by the intense photon beam of a synchrotron-radiation source. The surface photovoltage has been measured with a Kelvin probe. The largest surface photovoltage shift observed in the photoemission spectra was almost 1 eV. The Schottky barrier appears to be fully established at about 8 Angstrom, while the surface photovoltage does not disappear until about 16 Angstrom. The Schottky-barrier height is 1.35+/-0.1 eV. The Kelvin-probe results demonstrate directly that the photoemission data must be corrected for the surface photovoltage during the formation of the barrier but are insensitive to it once full coverage is obtained. (C) 1996 American Vacuum Society.
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Ist nazl fis mat,i-00133 rome,italy. ctr xray lithog,stoughton,wi 53589. acad sinica,taipei 115,taiwan. cnr,ist nazl metodol & tecnol microelettr,i-95121 catania,italy. ph ecublens,ecole polytech fed lausanne,ch-1015 lausanne,switzerland. Fanfoni, M, UNIV ROMA TOR VERGATA,DEPT PHYS,I-00133 ROME,ITALY.
ISI Document Delivery No.: VA964
Record created on 2006-10-03, modified on 2016-08-08