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  4. Influence of nitrogen profile an electrical characteristics of furnace- or rapid thermally nitrided silicon dioxide films
 
research article

Influence of nitrogen profile an electrical characteristics of furnace- or rapid thermally nitrided silicon dioxide films

Bouvet, D.
•
Clivaz, P. A.
•
Dutoit, M.
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1996
Journal of Applied Physics

Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacitors. Differences between the two nitridation processes were observed and explained. In lightly nitrided films, nitrogen occupies two configurations. Nitrogen is bound to three silicon atoms with at least one in the substrate or all three in the oxide. In RTP-nitrided films, both of these species are confined to within 1.5 nm of the Si/SiO2 interface. In furnace-nitrided films, the first species is also located close to the interface whereas the second one fills most of the regrown oxide thickness. In furnace-grown films, which are more heavily nitrided, a third structure due to Si-2=N-O is observed throughout the layer. The electrical characteristics are well correlated with the amount of nitrogen at the interface that is bound to Si atoms in the substrate. (C) 1996 American Institute of Physics.

  • Details
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Type
research article
DOI
10.1063/1.361481
Web of Science ID

WOS:A1996UJ08400064

Author(s)
Bouvet, D.
Clivaz, P. A.
Dutoit, M.
Coluzza, C.
Almeida, J.
Margaritondo, G.  
Pio, F.
Date Issued

1996

Published in
Journal of Applied Physics
Volume

79

Issue

9

Start page

7114

End page

7122

Subjects

PHOTOELECTRON-SPECTROSCOPY

•

X-RAY

•

OXYNITRIDES

•

INTERFACE

Note

Swiss fed inst technol,inst appl phys,ch-1015 lausanne,switzerland. sgs thomson microelectr,cent res & dev,i-20041 agrate brianza,italy. Bouvet, D, SWISS FED INST TECHNOL,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND.

ISI Document Delivery No.: UJ084

Editorial or Peer reviewed

REVIEWED

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Available on Infoscience
October 3, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/234702
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