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Ar+ Bombardment of Si(100) in Oxygen Atmosphere - Room-Temperature Oxide Formation Studied by X-Ray Photoelectron-Spectroscopy

We report the formation of silicon oxide thin films at room temperature obtained by Ar+ ion bombardment of Si(100) wafers in partial oxygen atmosphere. Samples have been prepared at several ion beam energies (0 less than or equal to E(b) less than or equal to 400 eV) and characterized by x-ray photoelectron spectroscopy. The oxidation rate, as well as the SiO2/SiOx (x = 0.5, x = 1, and x = 1.5) ratio, have been found to increase with the ion beam energy. For the highest energy bombardment, E(b) = 400 eV, we observed the formation of a uniform, electrically insulating, SiO2 top layer about 37 Angstrom thick. (C) 1995 American Institute of Physics.

    Keywords: OXIDATION ; SURFACE

    Note:

    Cnr,ist nazl metodol & tecnol microelettron,i-95121 catania,italy. Terrasi, a, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: RU953

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    Record created on 2006-10-03, modified on 2016-08-08

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