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research article
Evidence for a Photocurrent Fano Resonance in an Artificial Nanostructure
1995
We present internal-photoemission (photocurrent) experimental evidence for a Fano resonance at an n-p GaAs homojunction with a 0.5-ML Si intralayer (delta doping). This is one of a very few cases in which Fano resonances have been observed in artificial nanostructures. Our results show that this fundamental class of phenomenona plays a relevant role in band-gap engineering, by affecting the transport and phototransport properties of delta-doping nanostructures.
Type
research article
Web of Science ID
WOS:A1995RM15400014
Authors
Publication date
1995
Published in
Volume
52
Issue
4
Start page
R2265
End page
R2268
Note
Dellorto, t, ecole polytech fed lausanne, phb ecublens, inst appl phys, ch-1015 lausanne, switzerland.
ISI Document Delivery No.: RM154
Peer reviewed
REVIEWED
Available on Infoscience
October 3, 2006
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