Free-Electron Laser Spectroscopy of Semiconductors and Interfaces

The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge discontinuity measurements are discussed in order to illustrate the flexibility of the free-electron laser as a research tool.


Published in:
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 12, 4, 2323-2326
Year:
1994
ISSN:
0734-2101
Keywords:
Note:
Ecole polytech fed lausanne,ch-1015 lausanne,switzerland. Mckinley, jt, vanderbilt univ,dept phys & astron,box 1807 stn b,nashville,tn 37235.
ISI Document Delivery No.: NZ032
Part 2
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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