Free-Electron Lasers and Semiconductor Physics - 1st Results on Nonlinear Optics, Interfaces, and Desorption

During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonlinear optical absorption in germanium, photoabsorption at heterojunction interfaces with emphasis on highly accurate measurements of band-edge discontinuities, and finally resonant photodesorption/ablation.


Published in:
Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, 341, 1-3, 156-161
Year:
1994
ISSN:
0168-9002
Keywords:
Note:
Ecole polytech fed lausanne, lausanne, ch-1015 switzerland. Mckinley, jt, vanderbilt univ, nashville, tn 37235 usa.
ISI Document Delivery No.: NA788
15th International Free Electron Laser Conference
AUG 23-27, 1993
HAGUE, NETHERLANDS
UNIV TWENTE, DEPT APPL PHYS, FOM INST PLASMA PHYS RIJNHUIZEN
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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