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research article
Band Bending at Semiconductor Interfaces and Its Effect on Photoemission Line-Shapes
1993
We show that, contrary to intuition and under normal experimental conditions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of the band bending, and in most cases negligible. Non-negligible increases are found only when the linewidth is smaller than and, simultaneously, the photoelectron escape depth larger than in a typical experiment.
Type
research article
Web of Science ID
WOS:A1993KZ50800090
Authors
Publication date
1993
Published in
Volume
47
Issue
15
Start page
9907
End page
9909
Note
Margaritondo, g, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: KZ508
Peer reviewed
REVIEWED
Available on Infoscience
October 3, 2006
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