Band Bending at Semiconductor Interfaces and Its Effect on Photoemission Line-Shapes

• Published in: Physical Review B (ISSN: 0163-1829), vol. 47, num. 15, p. 9907-9909
• Publication date: 1993

We show that, contrary to intuition and under normal experimental conditions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of the band bending, and in most cases negligible. Non-negligible increases are found only when the linewidth is smaller than and, simultaneously, the photoelectron escape depth larger than in a typical experiment.

Note:

Margaritondo, g, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.

ISI Document Delivery No.: KZ508

Reference

• LSE-ARTICLE-1993-021
• doi:10.1103/PhysRevB.47.9907
• View record in Web of Science

Record created on 2006-10-03, modified on 2017-05-12