Band Bending at Semiconductor Interfaces and Its Effect on Photoemission Line-Shapes

We show that, contrary to intuition and under normal experimental conditions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of the band bending, and in most cases negligible. Non-negligible increases are found only when the linewidth is smaller than and, simultaneously, the photoelectron escape depth larger than in a typical experiment.


Published in:
Physical Review B, 47, 15, 9907-9909
Year:
1993
ISSN:
0163-1829
Note:
Margaritondo, g, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: KZ508
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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