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  4. Band Bending at Semiconductor Interfaces and Its Effect on Photoemission Line-Shapes
 
research article

Band Bending at Semiconductor Interfaces and Its Effect on Photoemission Line-Shapes

Margaritondo, G.  
•
Gozzo, F.
•
Coluzza, C.
1993
Physical Review B

We show that, contrary to intuition and under normal experimental conditions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of the band bending, and in most cases negligible. Non-negligible increases are found only when the linewidth is smaller than and, simultaneously, the photoelectron escape depth larger than in a typical experiment.

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Type
research article
DOI
10.1103/PhysRevB.47.9907
Web of Science ID

WOS:A1993KZ50800090

Author(s)
Margaritondo, G.  
Gozzo, F.
Coluzza, C.
Date Issued

1993

Published in
Physical Review B
Volume

47

Issue

15

Start page

9907

End page

9909

Note

Margaritondo, g, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.

ISI Document Delivery No.: KZ508

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSE  
LPRX  
Available on Infoscience
October 3, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/234604
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