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research article
Temperature-Dependence of the Heterojunction Band-Offset - Si on InP(110)
1993
We present a photoemission study of the initial growth stages of amorphous Si on the InP(110) cleaved surface, performed at 120 K and compared with the room-temperature (RT) results. Deposition at low temperature gives a larger valence-band discontinuity with respect to RT and high-temperature (280-degrees-C) growth. This effect is explained by the smaller outdiffusion of In atoms in the silicon overlayer.
Type
research article
Web of Science ID
WOS:A1993LY66500034
Authors
Dellorto, T.
•
Destasio, G.
•
Capozi, M.
•
Ottaviani, C.
•
Quaresima, C.
•
Perfetti, P.
•
Hwu, Y.
•
Publication date
1993
Published in
Volume
48
Issue
11
Start page
8035
End page
8039
Note
Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed lausanne,ch-1015 lausanne,switzerland. Dellorto, t, cnr,ist struttura mat,via enrico fermi 38,i-00044 frascati,italy.
ISI Document Delivery No.: LY665
Peer reviewed
REVIEWED
Available on Infoscience
October 3, 2006
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