Temperature-Dependence of the Heterojunction Band-Offset - Si on Inp(110)
We present a photoemission study of the initial growth stages of amorphous Si on the InP(110) cleaved surface, performed at 120 K and compared with the room-temperature (RT) results. Deposition at low temperature gives a larger valence-band discontinuity with respect to RT and high-temperature (280-degrees-C) growth. This effect is explained by the smaller outdiffusion of In atoms in the silicon overlayer.
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Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed lausanne,ch-1015 lausanne,switzerland. Dellorto, t, cnr,ist struttura mat,via enrico fermi 38,i-00044 frascati,italy.
ISI Document Delivery No.: LY665
Record created on 2006-10-03, modified on 2016-08-08