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research article
Intrinsic and Extrinsic Charge Neutrality Levels in Semiconductors - an Empirical-Approach
We discuss an empirical method to estimate the positions of intrinsic charge neutrality levels of semiconductors. The method, based on the relation between intrinsic and extrinsic charge neutrality levels, has been applied to Si, Ge, GaAs, GaP and InP.
Type
research article
Web of Science ID
WOS:A1992HG78300004
Authors
Publication date
1992
Published in
Volume
81
Issue
7
Start page
553
End page
556
Note
Univ autonoma madrid,fac ciencias,dept fis mat condensada c-xii,e-28049 madrid,spain. Gozzo, f, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HG783
Peer reviewed
REVIEWED
Available on Infoscience
October 3, 2006
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