Intrinsic and Extrinsic Charge Neutrality Levels in Semiconductors - an Empirical-Approach

We discuss an empirical method to estimate the positions of intrinsic charge neutrality levels of semiconductors. The method, based on the relation between intrinsic and extrinsic charge neutrality levels, has been applied to Si, Ge, GaAs, GaP and InP.


Published in:
Solid State Communications, 81, 7, 553-556
Year:
1992
ISSN:
0038-1098
Keywords:
Note:
Univ autonoma madrid,fac ciencias,dept fis mat condensada c-xii,e-28049 madrid,spain. Gozzo, f, ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HG783
Laboratories:




 Record created 2006-10-03, last modified 2018-03-18


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