Surface Photovoltage and Band Bending at Metal Gaas Interfaces - a Contact Potential Difference and Photoemission Spectroscopy Study
Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate various aspects of the problem of surface photovoltage (SPV) induced by the synchrotron radiation at (110) and (100) GaAs surfaces. A large and quasipermanent SPV is found at surfaces of low doped and low temperature (110) samples. SPV discharge mechanisms are investigated. Finally, the CPD technique is used to define conditions which minimize SPV and allow accurate measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and (110) and (100) GaAs surfaces.
Cnrs,crmc2,f-13003 marseille,france. univ aix marseille 1,f-13331 marseille 3,france. univ wisconsin,madison,wi 53706. ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. bellcore,red bank,nj 07701. Mao, d, princeton univ,dept elect engn,princeton,nj 08544.
ISI Document Delivery No.: GB897
Record created on 2006-10-03, modified on 2016-08-08