Bicasrcuo-Semiconductor Interface Formation Processes
1991
Abstract
The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi.
Details
Title
Bicasrcuo-Semiconductor Interface Formation Processes
Author(s)
Hwu, Y. ; Lozzi, L. ; Larosa, S. ; Marsi, M. ; Onellion, M. ; Berger, H. ; Gozzo, F. ; Levy, F. ; Margaritondo, G.
Published in
Solid State Communications
Volume
78
Issue
10
Pages
869-872
Date
1991
ISSN
0038-1098
Note
Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. Hwu, y, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: FT610
ISI Document Delivery No.: FT610
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Scientific production and competences > SB - School of Basic Sciences > SB Archives > LSE - Laboratory of Photoelectron Spectroscopy
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPRX - X-Ray Physics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-10-03