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research article
Bicasrcuo-Semiconductor Interface Formation Processes
The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi.
Type
research article
Web of Science ID
WOS:A1991FT61000004
Authors
Hwu, Y.
•
Lozzi, L.
•
Larosa, S.
•
Marsi, M.
•
Onellion, M.
•
•
Gozzo, F.
•
Levy, F.
•
Publication date
1991
Published in
Volume
78
Issue
10
Start page
869
End page
872
Note
Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. ecole polytech fed ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. Hwu, y, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: FT610
Peer reviewed
REVIEWED
Available on Infoscience
October 3, 2006
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