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research article
Low-Temperature Formation of Metal Molecular-Beam Epitaxy-Gaas(100) Interfaces - Approaching Ideal Chemical and Electronic Limits
Type
research article
Authors
Viturro, R. E.
•
Chang, S.
•
Shaw, J. L.
•
Mailhiot, C.
•
Brillson, L. J.
•
Terrasi, A.
•
Hwu, Y.
•
•
Kirchner, P. D.
•
Woodall, J. M.
Publication date
1989
Published in
Volume
7
Issue
4
Start page
1007
End page
1012
Note
Univ wisconsin,dept phys,madison,wi 53706. ibm corp,thomas j watson res ctr,yorktown hts,ny 10598. Viturro, re, xerox corp,webster res ctr,114-41d,webster,ny 14580.
ISI Document Delivery No.: AK872
Peer reviewed
REVIEWED
Available on Infoscience
October 3, 2006
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