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research article
GaSe-Ge and GaSe-Si - 2 Possible Examples of Schottky-Like Behavior of Heterojunction Interfaces
Type
research article
Web of Science ID
WOS:A1985AKX4900147
Authors
Publication date
1985
Volume
3
Issue
3
Start page
979
End page
980
Note
Inst struttura mat,frascati,italy. univ wisconsin,dept phys,madison,wi 53706. ecole polytech fed lausanne,phys appl lab,ch-1007 lausanne,switzerland.
ISI Document Delivery No.: AKX49
Peer reviewed
REVIEWED
Available on Infoscience
October 3, 2006
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