research article
Heterojunction Interface Formation - Si on Ge, GaAs, and CdS
Cite this item
Katnani, A. D., Stoffel, N. G., Daniels, R. R., Zhao, T. X., & Margaritondo, G. (1983). Heterojunction Interface Formation - Si on Ge, GaAs, and CdS. Journal of Vacuum Science & Technology A-Vacuum Surfaces and Films, 1(2), 692–694. https://doi.org/10.1116/1.571979
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Type
research article
Author(s)
Date Issued
1983
Volume
1
Issue
2
Start page
692
End page
694
Note
Katnani, ad, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: QS531
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
Available on Infoscience
October 3, 2006
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