Simulation of some quantum models for semiconductors

Three different existing steady-state models with quantum correction for simulating the resonant tunnelling diode are summarized. Numerical methods and a theoretical argument for one of the models are briefly described. Results of simulation axe focused on the capability of reproducing the negative differential resistivity.


Publié dans:
Mathematical Models & Methods in Applied Sciences, 12, 8, 1049-1074
Année
2002
ISSN:
0218-2025
Mots-clefs:
Note:
Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland. Caussignac, P, Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 592XH
Times Cited: 3
Cited Reference Count: 31
Autres identifiants:
Laboratoires:




 Notice créée le 2006-08-24, modifiée le 2018-12-03


Évaluer ce document:

Rate this document:
1
2
3
 
(Pas encore évalué)