Simulation of some quantum models for semiconductors
2002
Abstract
Three different existing steady-state models with quantum correction for simulating the resonant tunnelling diode are summarized. Numerical methods and a theoretical argument for one of the models are briefly described. Results of simulation axe focused on the capability of reproducing the negative differential resistivity.
Details
Title
Simulation of some quantum models for semiconductors
Author(s)
Caussignac, P. ; Descloux, J. ; Yamnahakki, A.
Published in
Mathematical Models & Methods in Applied Sciences
Volume
12
Issue
8
Pages
1049-1074
Date
2002
ISSN
0218-2025
Keywords
Note
Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland. Caussignac, P, Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 592XH
Cited Reference Count: 31
ISI Document Delivery No.: 592XH
Cited Reference Count: 31
Other identifier(s)
DAR: 343
View record in Web of Science
View record in Web of Science
Laboratories
ASN
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > MATH - Institute of Mathematics > ASN - Chair of Numerical Analysis and Simulation
Scientific production and competences > SB - School of Basic Sciences > Mathematics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > Mathematics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2006-08-24