Simulation of some quantum models for semiconductors

Three different existing steady-state models with quantum correction for simulating the resonant tunnelling diode are summarized. Numerical methods and a theoretical argument for one of the models are briefly described. Results of simulation axe focused on the capability of reproducing the negative differential resistivity.


Published in:
Mathematical Models & Methods in Applied Sciences, 12, 8, 1049-1074
Year:
2002
ISSN:
0218-2025
Keywords:
Note:
Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland. Caussignac, P, Ecole Polytech Fed Lausanne, Dept Math, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 592XH
Times Cited: 3
Cited Reference Count: 31
Other identifiers:
Laboratories:




 Record created 2006-08-24, last modified 2018-03-17


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