Development of relaxor ferroelectric materials for screen-printing on alumina and silicon substrates
The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O-3-0.35PbTiO(3) films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discussed in detail. The relative dielectric permittivity, as large as 13,000 have been obtained on SiO2 substrate after processing optimization. (c) 2005 Elsevier Ltd. All rights reserved.
WOS:000230569300032
2005
25
12
2125
2128
Gentil, S Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Mat Inst, Ceram Lab, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Mat Inst, Ceram Lab, CH-1015 Lausanne, Switzerland
946JW
Cited References Count:5
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