Thickness dependence of the properties of highly c-axis textured AlN thin films
The influence of film thickness on the material properties of aluminum nitride (AlN) thin films deposited on Pt(111) electrodes has been investigated experimentally by means of x-ray diffraction, dielectric response, atomic force microscopy, interferometry measurement of effective d(33), and residual stress measurement. The thickness was varied between 35 nm and 2 mum. Full width at mid-height of the rocking curve decreased from 2.60 to 1.14degrees, rms roughness increased from 3.8 to 18.6 Angstrom, the effective d(33), namely d(33f), from 2.75 to 5.15 pm/V. The permittivity epsilon(AIN) was stable at 10.2, whereas the dielectric losses decreased from 1% to 0.1%. The breakdown electric field under do voltages varied between 4.0 and 5.5 MV/cm. (C) 2004 American Vacuum Society.
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Martin, F Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland CSEM, RF Microelect, CH-2007 Neuchatel, Switzerland Univ Orleans, Polytech Inst, ESPEO, F-45067 Orleans, France
Cited References Count:28
Record created on 2006-08-21, modified on 2016-08-08