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Journal article

Crossover between nucleation-controlled kinetics and domain wall motion kinetics of polarization reversal in ferroelectric films

The study of polarization reversal in (Pb,La)(Zr,Ti)O-3 thin films reveals a drastic difference between the switching kinetics observed at RT and at low temperature of 40 K. In particular, at 40 K, the switching kinetics in studied films is similar to that observed in ferroelectric single crystals. Additionally, the films with completely different switching behavior at RT show very similar switching properties at 40 K. The data analysis suggests that the polarization reversal at RT is limited mainly by nucleation of reversed domains, while at 40 K, the switching kinetics is governed by domain wall motion. It is demonstrated that the measurements of switching kinetics at low temperature can provide useful information for modeling of the important, practical case of polarization reversal at RT. (C) 2003 American Institute of Physics.

    Keywords: thin-films

    Note:

    Stolichnov, I Swiss Fed Inst Technol, LAb Ceram, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, LAb Ceram, CH-1015 Lausanne, Switzerland Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

    732PH

    Times Cited:7

    Cited References Count:8

    Reference

    Record created on 2006-08-21, modified on 2016-08-08

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