Infoscience

Journal article

Tungsten based electrodes for stacked capacitor ferroelectric memories

Fabrication of high-density ferroelectric memories requires the growth of the ferroelectric material on the drain contact metal. In standard 0.5 mum technology, tungsten plugs are applied to connect the drain contacts to the first metallization level. In this work, we investigated electrode systems to be applied between sputter deposited, ferroelectric PbZr0.35Ti0.65O3 (PZT) and tungsten. Besides the obvious barrier function of such an electrode system, the texture of the PZT is of interest as well. The roughness of chemical vapor deposition (CVD) of W layer before and after etch-back by dry etching resulted in an increased leakage current of the ferroelectric capacitor. The problem could be solved by chemical mechanical polishing (CMP) of the tungsten film.

    Keywords: feram ; pzt thin films ; integration ; direct contact ; pb(zr ; ti)o-3 thin-films

    Note:

    Trupina, L EPFL, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland EPFL, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland EPFL, Swiss Fed Inst Technol, Gen Elect Lab, CH-1015 Lausanne, Switzerland Swatch Grp, Microelect Marin, Marin, Switzerland

    676AT

    Times Cited:0

    Cited References Count:7

    Reference

    Record created on 2006-08-21, modified on 2016-08-08

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